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 2SA1262
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3179) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1262 -60 -60 -6 -4 -1 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Audio and General Purpose
(Ta=25C) 2SA1262 -100max -100max -60min 40min -0.6max 15typ 90typ V MHz pF
12.0min 4.0max
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=-60V VEB=-6V IC=-25mA VCE=-4V, IC=-1A IC=-2A, IB=-0.2A VCE=-12V, IE=0.2A VCB=-10V, f=1MHz
External Dimensions MT-25(TO220)
3.00.2 10.20.2 4.80.2 2.00.1
Unit
A A
16.00.7
V
8.80.2
a b
o3.750.2
1.35
0.65 +0.2 -0.1 2.5 BCE 2.5 1.4
sTypical Switching Characteristics (Common Emitter)
VCC (V) -20 RL () 10 IC (A) -2 VBB1 (V) -10 VBB2 (V) 5 IB1 (mA) -200 IB2 (mA) 200 ton (s) 0.25typ tstg (s) 0.75typ tf (s) 0.25typ
Weight : Approx 2.6g a. Type No. b. Lot No.
I C - VCE Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) -4
V CE ( sat ) - IB Characteristics (Typical)
-1.5
I C - V BE Temperature Characteristics (Typical)
-4 (V C E= -4V)
-8
-3
0m
A
-60m
A
-50m A
Collector Current I C( A)
-40m A
-30mA
Collector Current I C( A)
-3
-1.0
emp eT Cas 125 C (
-2
-20mA
-2
)
-10mA
-1
I C= -3A -2A -1A 0 -0.1
I B= -5mA
0
0
-1
-2
-3
-4
-5
-6
-0.5
-0.1
-0.5
-1
0
0
-0.5
-30C
25C
-1
(Cas
-0.5
mp) (Cas e Tem p)
e Te
-1.0
-1.5
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
Base-Emittor Voltage V B E( V)
(VCE=-4V) 500 DC Curr ent Gain h F E D C Cur r ent Gai n h F E 200 125C 100 25C -30C 50
(V C E= -4V)
j- a( C/W)
Transient Thermal Resistance
h FE - IC Characteristics (Typical)
h FE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
5
Typ
100
50
1
20 -0.01
-0.1
-0.5
-1
-4
20 -0.02
-0.1 Collector Current I C( A)
-1
-4
0.7
1
10 Time t(ms)
100
1000
Collector Current I C( A)
fT - IE Characteristics (Typical)
60 (VCE=-12V) -10
Safe Operating Area (Single Pulse)
30
P c - T a Derating
1m
50 Cut- off F req uency f T( M H Z) Collector Cur rent I C( A)
M aximum Po wer Dissipat io n P C (W)
-5
10
s
10 m s
0m s
W ith
40
D
Typ
C
20
In fin ite he
30
-1
at si nk
20
-0.5
Without Heatsink Natural Cooling
10
10
Without Heatsink 0 0.005 0.01 -0.1 -2 2 -5 -10 -50 -100 0 0 25 50 75 100 125 150
0.05
0.1
0.5
1
3
Emitter C urrent I E( A)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
14


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